AOK8N80 800v,7.4a n-channel mosfet general description product summary v ds i d (at v gs =10v) 7.4a r ds(on) (at v gs =10v) < 1.63 w 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: AOK8N80l symbol the AOK8N80 is fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac- dc applications.by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. units parameter absolute maximum ratings t a =25c unless otherwise noted 900@150 AOK8N80 g d s top view to-247 g d s AOK8N80 symbol v ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r q ja r q cs r q jc mj 0.51 3.8 c/w AOK8N80 units a c mj w w/ o c c/w 0.5 c/w 40 300 maximum junction-to-ambient a,d c power dissipation b p d v/ns -55 to 150 v 30 gate-source voltage 7.4 4.6 t c =100c a 26 pulsed drain current c continuous drain current t c =25c i d v units parameter drain-source voltage AOK8N80 800 maximum junction-to-case 245 2 avalanche current c 217 single plused avalanche energy g 433 parameter maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds junction and storage temperature range derate above 25 o c repetitive avalanche energy c t c =25c thermal characteristics maximum case-to-sink a 5 rev0: jul 2012 www.aosmd.com page 1 of 5
AOK8N80 symbol min typ max units 800 900 bv dss / ? tj 0.86 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3.3 3.9 4.5 v r ds(on) 1.35 1.63 w g fs 9 s v sd 0.72 1 v i s maximum body-diode continuous current 7.4 a i sm 26 a c iss 1100 1375 1650 pf c oss 70 101 132 pf c rss 6 11 16 pf r g 1.7 3.5 5.3 w q g 20 26 32 nc q gs 7.3 nc q gd 9.1 nc t d(on) 35 ns t r 51 ns t d(off) 69 ns v ds =5v, i d =250 m a v ds =640v, t j =125c v ds =0v, v gs =30v v drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c zero gate voltage drain current id=250 a, vgs=0v maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime turn-off delaytime v gs =10v, v ds =400v, i d =8a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =640v, i d =8a dynamic parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss zero gate voltage drain current v ds =800v, v gs =0v m a bv dss static drain-source on-resistance v gs =10v, i d =4a reverse transfer capacitance v gs =0v, v ds =25v, f=1mhz switching parameters i s =1a,v gs =0v v ds =40v, i d =4a forward transconductance turn-on rise time gate source charge gate drain charge diode forward voltage d(off) t f 41 ns t rr 380 484 585 ns q rr 4.5 6 7.5 m c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =8a,di/dt=100a/ m s,v ds =100v turn-off fall time body diode reverse recovery time i f =8a,di/dt=100a/ m s,v ds =100v a. the value of r q ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c, ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. l=60mh, i as =3.8a, v dd =150v, r g =25 ? , starting t j =25 c rev0: jul 2012 www.aosmd.com page 2 of 5
AOK8N80 typical electrical and thermal characteristics 0 3 6 9 12 15 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5v 6v 10v 6.5v 5.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 r ds(on) ( w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =4a 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c voltage 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j (c) figure 5:break down vs. junction temparature rev0: jul 2012 www.aosmd.com page 3 of 5
AOK8N80 typical electrical and thermal characteristics 0 3 6 9 12 15 0 8 16 24 32 40 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =640v i d =8a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0 2 4 6 8 10 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 9: current de - rating (note b) v ds (volts) figure 10: maximum forward biased safe operating area for aok5n100 (note f) case figure 9: current de - rating (note b) 0.001 0.01 0.1 1 10 1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance for aok5n100 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.51 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev0: jul 2012 www.aosmd.com page 4 of 5
AOK8N80 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vgs vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev0: jul 2012 www.aosmd.com page 5 of 5
|
